Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (2024)

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Subjects Abstract Access options Additional access options: Similar content being viewed by others Van der Waals polarity-engineered 3D integration of 2D complementary logic Heterogeneous integration of spin–photon interfaces with a CMOS platform Canted spin order as a platform for ultrafast conversion of magnons References Acknowledgements Author information Authors and Affiliations Contributions Corresponding authors Ethics declarations Competing interests Supplementary information Supplementary information Rights and permissions About this article Cite this article This article is cited by Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain Influence of ferromagnetic interlayer exchange coupling on current-induced magnetization switching and Dzyaloshinskii–Moriya interaction in Co/Pt/Co multilayer system Controlling the helicity of light by electrical magnetization switching Field-free switching of perpendicular magnetization at room temperature using out-of-plane spins from TaIrTe4 Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface Associated content No field required References
  • Article
  • Published:
  • Guoqiang Yu1na1,
  • Pramey Upadhyaya1na1,
  • Yabin Fan1,
  • Juan G. Alzate1,
  • Wanjun Jiang1,
  • Kin L. Wong1,
  • So Takei2,
  • Scott A. Bender2,
  • Li-Te Chang1,
  • Ying Jiang3,
  • Murong Lang1,
  • Jianshi Tang ORCID: orcid.org/0000-0001-8369-00671,
  • Yong Wang3,
  • Yaroslav Tserkovnyak2,
  • Pedram Khalili Amiri1 &
  • …
  • Kang L. Wang1

Nature Nanotechnology volume9,pages 548–554 (2014)Cite this article

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  • Spintronics

Abstract

Magnetization switching by current-induced spin–orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin–orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co20Fe60B20/TaOx structures by spin–orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin–orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin–orbit torque is out-of-plane, facilitating the switching of perpendicular magnets.

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Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (1)
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (2)
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (4)
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (5)
Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (6)

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Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (7)

Van der Waals polarity-engineered 3D integration of 2D complementary logic

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Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (8)

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Article 29 May 2024

Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (9)

Canted spin order as a platform for ultrafast conversion of magnons

Article Open access 29 May 2024

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Acknowledgements

This work was partially supported by the Defense Advanced Research Projects Agency (DARPA) programme on Nonvolatile Logic (NVL) and in part by the National Science Foundation Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems (TANMS). This work was also supported in part by the Function Accelerated nanoMaterial Engineering Center, one of six centres of Semiconductor Technology Advanced Research network, a Semiconductor Research Corporation programme sponsored by Microelectronics Advanced Research Corporation and DARPA. P.U. and J.G.A. acknowledge partial support from a Qualcomm Innovation Fellowship.

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Author notes

  1. Guoqiang Yu and Pramey Upadhyaya: These authors contributed equally to this work

Authors and Affiliations

  1. Department of Electrical Engineering, University of California, Los Angeles, 90095, California, USA

    Guoqiang Yu,Pramey Upadhyaya,Yabin Fan,Juan G. Alzate,Wanjun Jiang,Kin L. Wong,Li-Te Chang,Murong Lang,Jianshi Tang,Pedram Khalili Amiri&Kang L. Wang

  2. Department of Physics and Astronomy, University of California, Los Angeles, 90095, California, USA

    So Takei,Scott A. Bender&Yaroslav Tserkovnyak

  3. Department of Materials Science and Engineering, Center for Electron Microscopy and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China

    Ying Jiang&Yong Wang

Authors

  1. Guoqiang Yu

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  2. Pramey Upadhyaya

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  3. Yabin Fan

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  7. So Takei

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  9. Li-Te Chang

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  11. Murong Lang

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  13. Yong Wang

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  14. Yaroslav Tserkovnyak

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  15. Pedram Khalili Amiri

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  16. Kang L. Wang

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Contributions

G.Q.Y. and P.U. jointly conceived the idea with contributions from Y.T., P.K.A. and K.L.W. G.Q.Y. designed the experiments to test the idea, fabricated and measured the devices, with contributions from Y.F., J.G.A., W.J., K.W., L.T.C., M.L., J.T., Y.J. and Y.W. P.U. performed the theoretical analysis and modelling, with help from S.T., S.A.B. and Y.T. G.Q.Y., P.U., P.K.A. and K.L.W. wrote the paper. All authors discussed the results and commented on the manuscript. The study was performed under the supervision of P.K.A. and K.L.W.

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Correspondence to Guoqiang Yu or Kang L. Wang.

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The authors declare no competing financial interests.

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Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (10)

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Yu, G., Upadhyaya, P., Fan, Y. et al. Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields. Nature Nanotech 9, 548–554 (2014). https://doi.org/10.1038/nnano.2014.94

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Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields (2024)

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